Innovation Type - Product

Potential beneficiaries - Industrial Electronics

SUMMARY / SPECIAL CHARACTERISTICS

The invention is related to the semiconductors area and can be applied for detecting magnetic and electromagnetic fields in electronic and modern optoelectronic systems.
While charging the ohmic contacts with current, current goes through the active coating. When a magnetic field is registered, the ohmic contacts show Hall voltage. The voltage value depends on the voltage and the force of the magnetic field. The locally formed p-n junction expands the sensor functional possibilities. While directly polarizing the junction, the sensor amperage increases at the point when the value of charging electricity goes up. When polarizing backwards the junction, the amperage goes down, because the spatial capacity extends over the active coating blocking the electricity flow. This way, the Hall voltage registered by Hall contacts, can be modulated by electrical signals supplied at p-n the junction contact.
Hall voltage can be also modulated by incident optic signals on the InGaAsP coating because the p-n junction possesses an elective photo-sensitivity. The charging electricity will increase its value when the p-n junction photocurrent goes up and will depend on the intensity and frequency of the incident flow.
Another major advantage of the photo-electromagnetic sensor is its multifunctional regime to serve as a common Hall sensor, photodiode and magneto-resistor, accordingly.

ADVANTAGES

Current stage of development - Lab testing

Where was applied - Technical University of Moldova.

Desired collaboration - Dealers, Partnership, Investments.